GaN (Gallium nitride) is very hard and stable chemical compound and it’s melting point is about 2000K. Generally, the atomic structure for GaN (gallium nitride) is closed-packed hexagonal structure and that results in relatively low symmetry of lattice and strong piezoelectricity and ferroelectricity. The piezoelectricity describes when the lattice suffers from certain direction pressure or tension, the …
GaN from certain direction pressure or tension, theRead More »